Silicon wafer surface treatment places extremely high demands on ambient humidity and cleanliness. Semiconductor humidifiers must precisely control humidity and regulate flow for dry carrier gases such as nitrogen, argon and clean air, achieving Class 1–100 cleanliness so as to avoid process contamination. The second-generation Voir SCU fluoropolymer microporous membrane humidifier uses a microporous structure to achieve bubble-free dissolution humidification. High-purity CO₂ and the carrier gas are separated by the membrane, and water vapor permeates and diffuses to complete dissolution. Closed-loop control of temperature, pressure and flow precisely regulates gas dew point and humidity. It is mainly used in wafer cleaning and lithography processes.

Core bubble-free membrane humidification technology eliminates process contamination
Multi-parameter precision control enables accurate humidity regulation
Instant sterile vaporization for pure, clean humidification
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| Static elimination & cleanliness enhancement | Environmental control for process precision | Stable bonding and anti-adsorption |
| Dew point control: | Typically −40 °C ~ +40 °C; precisely stable at 10–40 °C for core semiconductor diffusion furnace processes |
| Control accuracy: | Dew point ±0.2 °C / ±1 % RH dew point; up to ±0.1 °C for advanced processes |
| Flow range: | 0.1–1000 L/min, compatible with various gas operating conditions |
| Cleanliness standard: | Class 1–100; particles < 0.1 μm, metal ions < 1 ppb |
| Response time: | <10 s for standard conditions; down to 100 ms for precision processes |
| Water supply requirements: | compatible with 18.2 MΩ·cm UPW ultrapure water, TOC ≤ 10 ppb |
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